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May
Dc Reactive Magnetron Sputtering. CuAl target of 9999 purity was used for all of the depositions. The sputtering system is capable of producing the base pressure of 5 10 6 mbar. Reactive DC Magnetron Sputtering of Ultrathin Superconducting Niobium Nitride Films by Andrew E. This is an instance where the thin film industry has been served well by the development of electrical components and fast control of power supplies.
CrAlN films were synthesized by DC reactive magnetron sputtering. The CuAlO 2 films were deposited on glass substrates by dc reactive magnetron sputtering using the copperaluminum alloy in the ratio 13 due to the difference in the sputter yield target. Jianliang Lin Thomas C. When a highly insulating compound is deposited using DC reactive magnetron sputtering both the metallic and the insulating states exist simultaneously on the cathode surface due to the differential poisoning of magnetron cathodes. What is Sputtering. Reactive DC Magnetron Sputtering of Ultrathin Superconducting Niobium Nitride Films by Andrew E.
Among these deposition methods DC reactive magnetron sputter deposition technique has received considerable attention because of the advantage in the preparation of metal oxide films by sputtering the metallic target in the present of reactive gas of oxygen at low deposition temperatures and on to large area substrates.
The sputtering system is capable of producing the base pressure of 5 10 6 mbar. The sputter chamber was pumped with diffusion pump and rotary pump combination. Since sputtering is a momentum transfer process ion-bombardment of the cathode causes sputtering of both the insulating layers Ins and the. The optical and structural properties of titanium oxide thin films prepared by the ion-beam-assisted DC reactive magnetron sputtering were investigated and compared with those of. Jianliang Lin Thomas C. DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices.